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Name:2020科研成果

                 Research ID Profile (ID Number: E-8050-2010)

1. D. Wang, G. He*, Z. B. Fang*, L. Hao, Z. Q. Sun, Y. M. Liu, "Interface chemistry modulation and dielectric optimization of TMA-passivated HfDyOx/Ge gate stack by doping concentration and thermal treatment" RSC. Adv. 10 (2020) 938-951.

2.  F. Qiao*, Y. Xie, G. He*, W. J. Liu, Z. Y. Chen, H. Q. Chu, "Light Trapping Structure and Plasmons Synergistically Enhance the Photovoltaic Performance of Full-Spectrum Solar Cells" Nanoscale. 12 (2020) 1269-1280.

3. L. Hao, G. He*, Z. B. Fang, D. Wang, Z. Q. Sun, Y. M. Liu, "Modulation of the microstructure, optical and electrical properties of sputtering-driven Yb2O3 gate dielectrics by sputtering power and annealing treatment" Appl. Sur. Sci. 508 (2020) 145273.

4. C. Zhang, G. He*, Y. C. Zhang, Y. F. Xia, B. Yang, F. Alam, J. B. Cui, "Eco-Friendly Fully Water-Driven HfGdOx Gate Dielectrics and Its Application in Thin Film Transistors and Logic Circuits" IEEE Trans. Electro. Dev. 6(3) (2020) 1001-1008.

5. J. Gao, G. He*, L. Hao, D. Wang, L. Zhao, "A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates" RSC. Adv. 10 (2020) 14733-14745.

6.  Y. C. Zhang, G. He*, F. Alam, B. Yang, C. Zhang, Y. F. Xia, "Aqueous-solution-driven HfGdOx gate dielectrics for low-voltage-operated a-InGaZnO transistors and inverter circuits" J. Mater. Sci. Technol. 50 (2020) 1-12.

7. L. Zhang, J. Han, L. Liu, C. Ye*, Y. Zhou, W. Xiong, Y. X. Liu, and G. He*, "Resistive switching performance improvement of InGaZnO-based memory device by nitrogen palsma treatme" J. Mater. Sci. Technolo. 49 (2020) 1-6.

8. D. Wang, G. He*, L. Hao, L. S. Qiao, Z. B. Fang, and J. W. Liu, "Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven laminated Interlayers" ACS Appl. Mater & Interfaces. 12 (2020)25390-25399. 

9.  C. Zhang, G. He*, Z. B. Fang, W. H. Wang, Y. C. Zhang, Y. F. Xia, and B. Yang, " Performance Modulation in All-Solution-Driven InGaOx/HfGdOx Thin film Transistors and Exploration in Low-Voltage-Operated Logic Circuits" IEEE Trans. Electro. Dev. 67(10) (2020) 4238-4244.

10. B. Yang, G. He*, W. H. Wang, Y. C. Zhang, C. Zhang, Y. F. Xia, X. F. Xu, "Diffusion-activated high performance ZnSnO/Yb2O3 thin film transistors and application in low-voltage-operated logic circuits" J. Mater. Sci. Technolo. 70 (2021) 49-58. 

11 H. Yu, M. Zhang, Y. F. Wang, H. C. Yang, Y. M. Liu, L. Yang, G. He, Z. Q. Sun, "A Facile and Controllable Vapor-Phase Hydrothermal Approach to Anionic S2- Doped TiO2 Nanorod Arrays with Enhanced Photoelectrochemical and Photocatalytic Activity" Nanomaterials 10 (2020) 1776.

12. Y. C. Zhang, Y. J. Lin, G. He*, B. H. Ge, and W. J. Liu, "Balanced Performance Improvement of α-InGaZnO Thin Film Transistors by Using Dielectric Multilayers Sandwiching High-k HfGdOx .ACS Appl. Electron. Mater.  2(11) (2020) 3728-3740. 

13. Y. F. Wang, S. Ma, H. Yu, Y. Liu, . J. Gao. L. Yang, M. Zhang, Z. Q. Sun, and G. He, " Effect of TiO2 arrays on surface enhanced Raman scattering (SERS) performance for Ag/TiO2 substrates" Nanotechnology . 32 (2020) 075708.

14. G. Zhao, S. Wang, G. L. Zhou, S. J. Sun, Z. Y. Yang, J. G. Lv, Y. X. Ma, Y. Wang, C. J. Hu, J. J. ZHang, J. Yang, G. He, M. Zhang, M. ZHao, X. S. Chen, L. Yang, "rGO-Co-MoS2 Composite as Highly Active Electrocatalysts for Hydrogen Evolution Reaction" Internat. J. Electrochem. Sci. 15(11) (2020) 11623-11631















 


  


 
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