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Name:2020科研成果

                 Research ID Profile (ID Number: E-8050-2010)

1. D. Wang, G. He*, Z. B. Fang*, L. Hao, Z. Q. Sun, Y. M. Liu, "Interface chemistry modulation and dielectric optimization of TMA-passivated HfDyOx/Ge gate stack by doping concentration and thermal treatment" RSC. Adv. 10 (2020) 938-951.

2.  F. Qiao*, Y. Xie, G. He*, W. J. Liu, Z. Y. Chen, H. Q. Chu, "Light Trapping Structure and Plasmons Synergistically Enhance the Photovoltaic Performance of Full-Spectrum Solar Cells" Nanoscale. 12 (2020) 1269-1280.

3. L. Hao, G. He*, Z. B. Fang, D. Wang, Z. Q. Sun, Y. M. Liu, "Modulation of the microstructure, optical and electrical properties of sputtering-driven Yb2O3 gate dielectrics by sputtering power and annealing treatment" Appl. Sur. Sci. 508 (2020) 145273.

4. C. Zhang, G. He*, Y. C. Zhang, Y. F. Xia, B. Yang, F. Alam, J. B. Cui, "Eco-Friendly Fully Water-Driven HfGdOx Gate Dielectrics and Its Application in Thin Film Transistors and Logic Circuits" IEEE Trans. Electro. Dev. 6(3) (2020) 1001-1008.

5. J. Gao, G. He*, L. Hao, D. Wang, L. Zhao, "A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven HfxTiyAlzO nanolaminates" RSC. Adv. 10 (2020) 14733-14745.

6. B. Yang, G. He*, Q. Gao, Y. C. Zhang,  C. Zhang, Y. F. Xia, E. Fortunato, R. Martins, "Enhanced Performance of Aging-Diffusion-Driven DyOx-Based Transistor and Illumination Stability and Application in Digital Circuits" (Submitted)

7. G. He*E. Fortunato, R. Martins, "Recent Advance of Solution-Driven Hf-based High-k Dielectrics in Booming Transistors and Logic Application" (Submitted).

8. Y. C. Zhang, G. He*, F. Alam, B. Yang, C. Zhang, Y. F. Xia, "Aqueous-solution-driven HfGdOx gate dielectrics for low-voltage-operated a-InGaZnO transistors and inverter circuits" J. Mater. Sci. Technol. 50 (2020) 1-12.

9. L. Zhang, J. Han, L. Liu, C. Ye*, Y. Zhou, W. Xiong, Y. X. Liu, and G. He*, "Resistive switching performance improvement of InGaZnO-based memory device by nitrogen palsma treatme" J. Mater. Sci. Technolo. 49 (2020) 1-6.

10. D. Wang, G. He*, L. Hao, L. S. Qiao, Z. B. Fang, and J. W. Liu, "Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven laminated Interlayers" ACS Appl. Mater & Interfaces. 12 (2020)25390-25399. 

11.  C. Zhang, G. He*, Z. B. Fang, W. H. Wang, Y. C. Zhang, Y. F. Xia, and B. Yang, " Performance Modulation in All-Solution-Driven InGaOx/HfGdOx Thin film Transistors and Exploration in Low-Voltage-Operated Logic Circuits" IEEE Trans. Electro. Dev (Accepted)

12. B. Yang, G. He*, W. H. Wang, Y. C. Zhang, C. Zhang, Y. F. Xia, X. F. Xu, "Diffusion-activated high performance ZnSnO/Yb2O3 thin film transistors and application in low-voltage-operated logic circuits" J. Mater. Sci. Technolo (Accepted).

13. L. Hao, G. He*, L. S. Qiao, Z. B. Fang, B. Yao, "Interface optimization and modulation of leakage current conduction mechanism of Yb2O3/GaSb MOS capacitors with (NH4)2S solutions passivation" (Submitted)

14. D. Wang, G. He*, " Comparative study on the interface and electrical properties of Ge MOS with different rare earth elements doped HfO2 gate dielectrics" ( In Preparation)

15. Y. F. Xia, G. He*, W. H. Wang, Y. C. Zhang, B. Yang, "Electrospun In2O3 nanofibers for low-voltage thin film transistors and integrated inverter circuits" (Submitted)

16.  S. Wang, G. L. Zhou, J. G. Lv*, Y. X. Ma, Y. Wang, C. J. Hu, J. J. Zhang, J. Yang, G. He*, M. Zhang, M. Zhao, X. S. Chen, L. Yang, "Co9S8/CoS@S, N co-doped porous carbon derived from MOFs as an efficient catalyst for the oxygen evolution reaction" J. Phys. Chem. Sol. 148 (2020) 109696.

17. H. Yu, M. Zhang, Y. F. Wang, H. C. Yang, Y. M. Liu, L. Yang, G. He, Z. Q. Sun, "A Facile and Controllable Vapor-Phase Hydrothermal Approach to Anionic S2- Doped TiO2 Nanorod Arrays with Enhanced Photoelectrochemical and Photocatalytic Activity" Nanomaterials XX (2020) XX.













 


  


 
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