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Name:2018科研成果

1. W. D. Li, G. He*, C. Y. Zheng, S. Liang, L. Zhu, and S. S. Jiang, "Solution-processed HfGdO gate dielectric thin films for CMOS application: Effect of annealing temperature" J. Alloys. Comp.731 (2018) 150-155.

2. L. L. Fang, X. Z. Wang, Z. Wang, Z. Z. Gong. L. P. Jin, J. Li, M. Zhang, G. He, Z. Q. Sun, "Heterostructures TiO2 nanotree arranys with silver quantum dots loading for enhanced photoelectrochemical properties" J. Alloys. Comp. 730 (2018) 110-118. 

3. S. Liang, G. He*, C. Y. Zheng, J. Gao, D. Wang, C. Zhang, M. Liu, "Modulation of the microstructure, optical and electrical properties of HfYO gate dielectrics by annealing temperarure". J. Alloys. Comp. 735 (2018) 1427-1434.

4. S. S. Jiang, G. He*, M. Liu, L. Zhu, S. Liang, W. D. Li, Z. Q. Sun, M. L. Tiang, " Interface modulation and optimization of electrical properties of HfGdO/GaAs gate stacks by ALD-derived Al2O3 passivation layer and forming gas annealing" Adv. Electron. Mater. 4 (2018) 1700543.

5. J. Gao, G. He*, S. Liang, D. Wang, B. Yang, "Comparative study on in-situ surface cleaning effect of intrinsic oxide covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics" J. Mater. Chem. C 6 (2018) 2546-2555.

6. L. Zhu, G. He*, W. D. Li, B. Yang, E. Fortunato, R. Martins, "Nontoxic, Eco-friendly Fully Water-Induced Ternary Zr-Gd-O Dielectric for High-Performance Transistors and Unipolar Inverter" Adv. Electro. Mater. 4 (2018) 1800100.

7. L. Zhu, G. He*, Y. T. Long, B. Yang, J. G. Lv, "Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters" IEEE Trans. Electro. Devices, 65(7) (2018) 2870-2876.

8. L. Zhu, G. He*, J. G. Lv, E. Fortunato, R. Martins, "Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics" RSC. Adv. 8 (2018) 16788-16799.

9. S. S. Jiang, G. He*, Z. B. Fang, P. H. Wang, Y. M. Liu, J. G. Lv, M. Liu, "Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics" J. Alloys Compd. 757 (2018) 288-297.

10. W. H. Wang, S. Wang, J. G. Lv, M. Zhao, M. Zhang, G. He, C. X. Fang, L. L. Li, Z. Q. Sun, "Enhanced photoresponse and photocatalytic activities of graphene quantum dots sensitized Ag/TiO2 thin film" J. Am. Ceram. Soc. 101(12) (2018) 5469-5476.

11. Y. C. Zhang, G. He*, C. Zhang, L. Zhu, B. Yang, Q. B. Lin, X. S. Jiang, "Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter" J. Alloys. Compd. 765 (2018) 791-799.

12. Li, L. P. Jin, L. L. Fang, M. Zhang, Y. F. Wang, X. S. Jiang, J. G. Lv, G. He, Z. Q. Sun, "Synthesis and characterization of Bi2S3 quantum dot-sensitized TiO2 nanorod arrays coated with ZnSe passivation layers" Appl. Surf. Sci. 456 (2018) 694-700.

13. J. G. Lv, R. Miao, M. Zhang, G. He, M. Zhao, B. Yu, W. Wang, B. Li, Z. Q. Sun, "Few-layers MoS2 sensitized Ag–TiO2 nanocomposite thin film for enhancing photocatalytic activity" J. Mater. Sci: Mater. Electro. 29(19) (2018) 16282-16288.

14. G. He*, W. D. Li, Z. Q. Sun, M. Zhang, X. S. Chen, "Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters" RSC. Adv. 8 (2018) 36584-36595.

15. Y. F. Wang, J. Gao, X. Z. Wang, L. P. Jin, L. L. Fang, M. Zhang, G. He, Z. Q. Sun, "Facile synthesis of core-shell ZnO/Cu2O heterojunction with enhanced visible light-driven photocatalytic performance" J. Sol-Gel. Sci. Tech. 88(1) (2018) 172-180.





 
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